Advanced Power Electronics, a leading Taiwanese manufacturer of MOS power semiconductors for DC-DC power conversion applications, has announced a new dual N-channel enhancement-mode power MOSFET well-suited for battery applications.
The AP9922AGEO-HF-3 device supports 1.8V gate drive and features a low on-resistance of 18mΩ, a drain-source breakdown voltage of 20V and a continuous drain current of 6A. RoHS-compliant and halogen-free, the device is available in the small and thin TSSOP-8 package.
Comments Ralph Waggitt, President/CEO, Advanced Power Electronics Corp. (USA): “We specialise in providing the designer with the best combination of fast switching, ruggedness, ultra low on-resistance and cost-effectiveness. As designers of battery-powered applications continue to focus on battery life, it becomes increasingly more important to address the need to manage the battery efficiently.”