Advanced Power Electronics launches dual n- and p-channel MOSFETs for battery apps

Date
05/03/2013

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Advanced Power Electronics, a leading manufacturer of MOS power semiconductors for DC-DC power conversion applications, announced two power MOSFETs well-suited for battery management and protection applications, the AP9922GEO-HF-3 and AP9923GEO-HF-3, dual n- and dual p-channel enhancement-mode products respectively. Both products feature low on-resistance, 16m? for the AP9922GEO-HF-3 and 25m? for the AP9923GEO-HF-3, and both devices are capable of operating with gate drive down to 1.8V. RoHS-compliant and halogen-free, the devices are available in the small, thin TSSOP-8 package. Ralph Waggitt, President/CEO, Advanced Power Electronics said, "we specialize in providing the designer with the best combination of fast switching, ruggedness, ultra low on-resistance and cost-effectiveness. As designers of battery-powered applications continue to focus on battery life, it becomes increasingly more important to address the need to manage the battery efficiently, and provide appropriate components for efficient protection." Advanced Power Electronics

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