Alpha and Omega Semiconductor Introduces Innovatively Designed, Space-Saving Half-Bridge MOSFET for DC-DC Applications

Date
05/24/2024

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By reducing the footprint size to enable a more efficient high-power design, the AONG36322 XSPairFET™ provides a leading solution for space-constrained DC-DC Buck applications

Alpha and Omega Semiconductor Introduces Innovatively Designed, Space-Saving Half-Bridge MOSFET for DC-DC Applications

Alpha and Omega Semiconductor Limited (AOS) introduced its AONG36322XS PairFET designed for space-constrained DC-DC applications.  The new AONG36322 features two 30V MOSFETs in a half-bridge configuration where the high-side and the low-side MOSFETs are in an asymmetric DFN3.5x5 XSPairFET package.  This innovative design allows the AONG36322 to replace an existing DFN5x6 asymmetric half-bridge MOSFET with an approximate 60 percent space-saving solution, thereby reducing the PCB footprint to further streamline the DC-DC architecture, resulting in a more efficient design. These benefits make the AONG36322 ideal for a new generation of smaller DC-DC buck converters in more compact applications such as point-of-load (POL) computing, USB hubs, and power banks.

The AONG36322 is an extension to the AOS XSPairFET lineup, designed with the latest bottom-source packaging technology.  Its integrated high-side and low-side MOSFETs feature 4.5 mOhms and 1.3 mOhms maximum on-resistance, respectively, where the low-side MOSFET source is connected directly to the exposed pad on the PCB to enhance thermal dissipation.  A definite advantage of the state-of-the-art AONG36322 package design is that it delivers lower parasitic inductance, significantly reducing switch node ringing.

“We designed the AONG36322 in the DFN3.5x5 package to help our customers meet their ongoing board space limitations. Our breakthrough AOS XSPairFET design also gives them the benefit of improved power density and efficiency to overcome the challenge developers face in meeting ever-increasing POL Buck application performance goals,” said Peter H. Wilson, Marketing Sr. Director of MOSFET product line at AOS.

Technical Highlights

Part Number

Package

VDS (V)

VGS (±V)

RDS(ON) (mΩ max) at VGS=

Ciss (pF)

Coss (pF)

Crss (pF)

Qg (nC)

10V

4.5V

AONG36322

DFN 3.5x5

High Side (Q1)

30

20

4.5

8.0

1150

380

555

7.5

Low Side (Q2)

30

12

1.3

1.75

4180

880

125

30

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