Alpha and Omega Semiconductor launches family of high-performance common-drain MOSFETs



Alpha and Omega Semiconductor (AOS), a designer, developer and 
supplier of a broad range of power semiconductors and power ICs, 
released a dual MOSFET family in the common-drain 
configuration in both DFN 5x6 and Micro-DFN 3.2x2 packages. These 
devices are suitable for battery pack applications where two n-channel 
MOSFETs are connected back-to-back for safe charging and discharging as 
well as voltage protection. The products provide ultra-low RSS 
(source-to-source resistance) of less than 10mOhms at 10V gate drive. 
AON6810, AON6812, and AOC4810 provide ideal solutions for enhancing 
battery pack performance in the latest generation Ultrabooks and 
tablets, where low conduction loss is a must for optimizing battery 

The new devices use the latest AlphaMOS(TM) technology to accomplish 
very low RDS(ON) along with 4kV ESD protection to enhance battery pack 
safety. AON6810 and AON6812 use a bottom-exposed DFN5x6 package for 
enhanced thermal capability. The AON6812 features a low 8mOhm max total 
RSS (source-to-source) resistance at 10V drive. Rated with a 30V 
breakdown voltage, it is capable of charging and discharging a laptop 
battery pack with the least amount of power loss and heat dissipation. 
The AON6810 provides an extra level of protection with an internal 
temperature sense diode that provides first-hand thermal information to 
the battery control IC. By utilizing the temperature sense pins of 
AON6810, designers can accurately monitor the MOSFETs' thermal 
condition in a real time basis to prevent any abnormal overheating.

To meet the demand of ultra-thin battery packs, the AOC4810 takes 
advantage of AOS's innovative Micro-DFN package, which features an 
ultra-low profile of only 0.4mm. Unlike conventional CSP (chip scale 
packaging), the Micro-DFN eliminates the risk of die chipping by 
encapsulating the silicon to provide full protection to the die as well 
as providing excellent moisture isolation. When board space is a key 
concern, AOC4810 provides a great option to further enhance power 
density. With dimensions of only 3.2mm x 2mm, AOC4810 offers a maximum 
RSS level of 8.8mOhms to minimize conduction loss and heat dissipation.

"The new AOS common-drain MOSFETs help simplify battery pack circuitry 
and save space in today's compact battery pack designs. Combined with 
their high ESD capability and ulta-low on-resistance, this new family 
enables a new level of size and safety for enhanced battery 
performance," said George Feng, Senior Manager of Product Marketing.

All devices are immediately available in production quantities with a 
lead-time of 12-14 weeks. The unit price for 1,000 pieces for AON6812, 
AON6810, and AOC4810 are $0.825, $0.78, and $0.525 respectively. 
The AON6810, AON6812, and AOC4810 are all RoHS and Halogen-Free 

Alpha and Omega Semiconductor