Alpha and Omega Semiconductor launches family of high-performance common-drain MOSFETs
Alpha and Omega Semiconductor (AOS), a designer, developer and
supplier of a broad range of power semiconductors and power ICs,
released a dual MOSFET family in the common-drain
configuration in both DFN 5x6 and Micro-DFN 3.2x2 packages. These
devices are suitable for battery pack applications where two n-channel
MOSFETs are connected back-to-back for safe charging and discharging as
well as voltage protection. The products provide ultra-low RSS
(source-to-source resistance) of less than 10mOhms at 10V gate drive.
AON6810, AON6812, and AOC4810 provide ideal solutions for enhancing
battery pack performance in the latest generation Ultrabooks and
tablets, where low conduction loss is a must for optimizing battery
life.
The new devices use the latest AlphaMOS(TM) technology to accomplish
very low RDS(ON) along with 4kV ESD protection to enhance battery pack
safety. AON6810 and AON6812 use a bottom-exposed DFN5x6 package for
enhanced thermal capability. The AON6812 features a low 8mOhm max total
RSS (source-to-source) resistance at 10V drive. Rated with a 30V
breakdown voltage, it is capable of charging and discharging a laptop
battery pack with the least amount of power loss and heat dissipation.
The AON6810 provides an extra level of protection with an internal
temperature sense diode that provides first-hand thermal information to
the battery control IC. By utilizing the temperature sense pins of
AON6810, designers can accurately monitor the MOSFETs' thermal
condition in a real time basis to prevent any abnormal overheating.
To meet the demand of ultra-thin battery packs, the AOC4810 takes
advantage of AOS's innovative Micro-DFN package, which features an
ultra-low profile of only 0.4mm. Unlike conventional CSP (chip scale
packaging), the Micro-DFN eliminates the risk of die chipping by
encapsulating the silicon to provide full protection to the die as well
as providing excellent moisture isolation. When board space is a key
concern, AOC4810 provides a great option to further enhance power
density. With dimensions of only 3.2mm x 2mm, AOC4810 offers a maximum
RSS level of 8.8mOhms to minimize conduction loss and heat dissipation.
"The new AOS common-drain MOSFETs help simplify battery pack circuitry
and save space in today's compact battery pack designs. Combined with
their high ESD capability and ulta-low on-resistance, this new family
enables a new level of size and safety for enhanced battery
performance," said George Feng, Senior Manager of Product Marketing.
Availability
All devices are immediately available in production quantities with a
lead-time of 12-14 weeks. The unit price for 1,000 pieces for AON6812,
AON6810, and AOC4810 are $0.825, $0.78, and $0.525 respectively.
The AON6810, AON6812, and AOC4810 are all RoHS and Halogen-Free
compliant.
