The DMT47M2LDVQ can replace two discrete MOSFETs to reduce the board space footprint in many automotive applications, from electric seat control to advanced driver-assistance systems (ADAS).
“The electronic content of vehicles has increased rapidly during the past decade and this has fueled a demand for continuous innovation,” commented Ian Moulding, Diodes Incorporated automotive marketing manager. “Our response to this demand has expanded our reputation as a trusted supplier to the automotive sector.
“Diodes has posted six consecutive years of double-digit growth in this market,” continued Moulding. “The DMT47M2LDVQ is an example of how we are helping the automotive industry address the technical and commercial challenges it faces when developing the next generations of vehicles.”
The DMT47M2LDVQ integrates two n-channel enhancement mode MOSFETs with the industry's lowest RDS(ON) for this configuration – just 10.9mΩ at VGS of 10V and ID of 30.2A. This low on-resistance keeps conduction losses to a minimum in applications such as wireless charging or motor control. The typical gate charge of 14.0nC, at a VGS of 10V and ID of 20A, ensures that switching losses are minimized.
The DMT47M2LDVQ’s thermally efficient PowerDI® 3333-8 package returns a junction-to-case thermal resistance (Rthjc) of 8.43°C/W, making it possible to develop end applications with a higher power density than with MOSFETs packaged individually. This can reduce the PCB area needed for implementing automotive features, including ADAS.
Qualified to AEC-Q100 Grade 1, supporting PPAP documentation, and manufactured in IATF 16949 certified facilities, the DMT47M2LDVQ is available now priced at $0.45 in 3000 piece quantities.