BluGlass RPCVD process achieves quality yields

BluGlass says it can now produce GaN (gallium nitride) with industry-accepted impurity levels via its low temperature RPCVD (Remote Plasma Chemical Vapour Deposition) technology. The Sydney-based, Australian Mcquarie University spinoff, BluGlass is involved in the development of semiconductor processes and equipment for the manufacture of high efficiency devices such as next generation lighting technology, LEDs (light emitting diodes) and solar cells. Its key technology is the low temperature RPCVD developed for the low temperature growth of nitride based thin films, such as GaN (Gallium Nitride), InGaN (Indium Gallium Nitride ) and other nitrides, using an alternative process to the traditional higher temperature MOCVD (Metal Organic Chemical Vapour Deposition) process used curently to produce high brightness LEDs. With lower growth temperature than MOCVD, RPCVD has the potential to allow electronics manufacturers to create higher performing devices by reducing active material exposure to  high temperatures and also reducing the strain on the device. The recent BluGlass announcement indicates its RPCVD grown GaN layers are showing reduced levels of key impurities (carbon, hydrogen and oxygen) on par with that achievable with MOCVD. Impurity levels were measured using SIMS (Secondary Ion Mass Spectrometry) by EAG (Evans Analytical Group). EAG has confirmed that BLG has demonstrated carbon, oxygen and hydrogen impurities at levels less than 1x10¹⁷ atoms per cm3 This is a significant step forward that BluGlass believes will help enable the demonstration of industry equivalent electrical properties in RPCVD grown films to reach its proof of concept milestone. Evans Analytical Group BluGlass