Bourns TVS Diodes Address High‑Surge ESD Protection in DFN‑2 (0402) Footprints
Bidirectional 3.3 V and 5.0 V devices support IEC‑qualified ESD, EFT and surge protection for space‑constrained external interfaces
Bourns announced the Model CDDFN2‑T3V3SC and CDDFN2‑T5V0SC Surface‑Mount Transient Voltage Suppressor (TVS) Diodes, designed to provide ESD, EFT, and surge protection in DFN‑2 (0402) footprints for space‑constrained electronic designs. The bidirectional devices support IEC 61000‑4‑2, ‑4‑4, and ‑4‑5 protection requirements while maintaining working peak reverse voltages of 3.3 V and 5.0 V, respectively. High peak pulse current capability allows designers to meet surge requirements that previously required larger package solutions.
As external interfaces in portable and connected devices continue to shrink, designers face increasing difficulty balancing board‑level space constraints with rising ESD and surge robustness requirements. Traditional approaches often force tradeoffs between protection performance and footprint size, particularly for low‑voltage signal and power rails. In applications subject to IEC surge testing, achieving adequate peak pulse current capability in miniature packages can be especially challenging. The CDDFN2‑T3V3SC and CDDFN2‑T5V0SC devices address this constraint by combining high surge capability with a DFN‑2 (0402) form factor.
“Designers protecting external ports and low‑voltage rails are often constrained by both board area and IEC surge requirements,” said Rollin Roos, Product Line Manager, Semiconductors (Diodes), Bourns. “These TVS diodes provide qualified ESD and surge performance in a DFN‑2 footprint, allowing engineers to reduce PCB area without relaxing protection margins defined by IEC standards.”
Design Features and Key Capabilities
- Bidirectional TVS architecture— supports symmetric protection for AC or data line interfaces without polarity constraints
- High ESD protection level— rated to ±30 kV per IEC 61000‑4‑2 contact and air discharge testing
- High peak pulse current capability— up to 42 A (8/20 μs) for the 3.3 V device and up to 18 A (8/20 μs) for the 5.0 V device per IEC 61000‑4‑5
- DFN‑2 (0402) package— nominal dimensions of 1.0 mm × 0.6 mm × 0.5 mm support dense PCB layouts
- IEC surge and EFT compliance— designed to meet IEC 61000‑4‑4 (EFT) and IEC 61000‑4‑5 (surge) requirements
- RoHS compliant* and halogen free**
Electrical Specifications
|
Parameter |
CDDFN2-T3V3SC |
CDDFN2-T5V0SC |
|
Working Peak Reverse Voltage (V) |
3.3 V |
5.0 V |
|
Breakdown Voltage @ 1 mA (V) |
4.5 – 6.8 V |
6 – 9 V |
|
Peak Pulse Current, IEC 61000-4-5 (8/20 μs) |
42 A |
18 A |
|
ESD Protection, IEC 61000-4-2 |
±30 kV |
±30 kV |
|
Junction Capacitance @ 0 V, 1 MHz |
Typ. 70 pF |
Typ. 27 pF |
|
Operating Temperature Range |
−55 °C to +125 °C |
−55 °C to +125 °C |
Target Applications
- Communication system interfaces
- Handheld and battery‑powered devices
- Portable instrumentation
- Low‑voltage power rail protection
Availability
The Bourns® Model CDDFN2‑T3V3SC and CDDFN2‑T5V0SC TVS Diodes are available now through Bourns’ authorized distribution network. Full specifications and ordering information are available here.
