Cree’s GaN RF transistors
Cree, a leader in gallium nitride (GaN) RF devices, has introduced two industry-leading GaN HEMT (high electron mobility transistor) devices that solve a number of long-standing issues for radar systems employing traditional traveling wave tube (TWT) amplifiers. GaN-based solid-state amplifiers operating at 50V are not prone to the failure mechanisms seen with high voltage (kV) TWT power supplies, and thus provide longer lifetimes. Also, such solid-state systems provide near instant on capability — with no warm up, longer detection ranges, and improved target discrimination.
Conceived from the start to enable these system benefits, Cree’s two new GaN RF transistors were engineered to provide the highest power and efficiency housed in a small package size. The first device, a 350W/50Ω fully matched GaN HEMT is the highest power C-Band transistor available on the market. The second, a 500W/50Ω GaN HEMT, is the highest power S-Band transistor fully matched to 50Ω in a single-ended package of its size. Both devices will be demonstrated at the industry’s premier technical conference, the International Microwave Symposium, which will take place May 17 – 21 in Phoenix, Ariz.
“Cree’s new C- and S-Band products break power records for GaN power and efficiency performance housed in a small 50Ω package. This efficient power enables the economical combination of transistors to achieve multi-kilowatt power amplifiers required for defense, weather, and air traffic control radar,” said Tom Dekker, director of sales and marketing, Cree RF. “If we consider the figure of merit for RF power output relative to the area of a 50Ω package, Cree’s 350W C-Band device beats the closest commercial GaN competitor by an estimated 3.5 times. Using the same figure of merit, Cree’s 500W S-Band device raises the bar by 45 percent over other commercial S-Band products.”
Offering pulsed saturated power performance typically greater than 400 watts, the CGHV59350 is most often used in ground-based defense and Doppler weather radar systems. The 50Ω, fully matched GaN HEMT operates over a 5.2 – 5.9GHz bandwidth, exhibits 60 percent typical drain efficiency, and is packaged in an industry standard 0.7” x 0.9” ceramic/metal flange package.
Delivering 700 watts of typical saturated RF pulsed power, the CGHV31500F is offered for air traffic control radar systems. The 50Ω, fully matched GaN HEMT operates over a 2.7 – 3.1GHz bandwidth, exhibits 12dB power gain, and is packaged in an industry standard 0.7” x 0.9” ceramic/metal flange package.
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