Cree Introduces 150-mm 4HN Silicon Carbide Epitaxial Wafers



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Cree's low micropipe 4H n-type SiC epitaxial wafers are now available in 150 mm diameter.

CREE has announced availability of high quality, low micropipe 150-mm 4H n-type SiC (silicon carbide) epitaxial wafers. Cree continues to lead the SiC materials marketplace in driving to larger diameters and this latest advancement lowers device cost and enables adoption for customers with existing 150-mm diameter device processing lines. 150-mm epitaxial wafers with highly uniform epitaxial layers as thick as 100 microns are available for immediate purchase. SiC is a high-performance semiconductor material used in the production of a broad range of lighting, power, and communication components, including LEDs, power switching devices, and RF power transistors for wireless communication. 150-mm diameter single crystal SiC substrates enable cost reductions and increased throughput, while bolstering the continued growth of the SiC industry. "Cree's ability to deliver high volumes of 100-mm epitaxial wafers is unrivaled in the SiC industry and our latest 150-mm technology continues to raise the standards for SiC wafers," said Dr. Vijay Balakrishna, Cree materials product manager. Cree