Cree, a leading supplier of silicon carbide (SiC) and gallium nitride (GaN) wafers and devices, is exhibiting at, chairing, and sponsoring this year’s IEEE Wireless and Microwave Technology Conference (WAMICON) — the leading conference for addressing developments in microwave and RF wireless technologies — which will take place April 13–15, 2015 in Cocoa Beach, FL.
This year’s conference will include 65 oral presentations and 14 invited expert speakers from industry and academia, a series of four tutorial sessions, an interactive poster session with 21 posters, and two invited plenary keynote addresses on the “Technology Implications of 5G.” There will be an awards banquet and a manufacturers’ exhibition to showcase the latest product and technology offerings.
Exhibiting at Booth #2, Cree will highlight its latest 50V GaN HEMT packaged devices and bare die, as well as discuss how Cree’s GaN-on-SiC HEMT technology exhibits high efficiency, low parasitics, and high current gain cutoff frequency, which enables wireless design engineers to develop smaller and more efficient UHF, L-, S-, and C-Band radar equipment, tactical communications amplifiers, public safety amplifiers, UAV data links, satcom amplifiers, broadcast communication equipment, and ISM (industrial, scientific and medical) amplifiers.
Cree will also showcase the latest examples of its GaN HEMT products for wireless applications, including: the industry’s highest power 50V device, rated at 320W for operation up to 4GHz; the only 50V bare GaN HEMT die publicly available on the market, rated at 20W, 40W, 75W, and 170W for operation up to 6GHz; and its latest discrete GaN HEMT packaged devices, rated at 30W for operation up to 6GHz and 100W for operation up to 3GHz.
In addition, Cree is co-sponsoring the 2015 WAMICON awards for Best Conference Paper, Best Student Paper, and Best Student Poster, and is an active member of the steering committee, with Sarah Miller, marketing, Cree RF, serving as the 2015 Website Chair.