Cree's next-gen 900V SiC MOSFET now at Mouser

Date
06/17/2015

Categories:
Discrete Components, Embedded Systems, High Power, High Voltage, MOSFETs & Power MOSFETs, Power Semiconductors, Silicon Carbide (SiC)

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Cree C3M SiC power MOSFET

Mouser Electronics, an authorized distributor with the latest semiconductors and electronic components, is stocking the C3M family of silicon carbide power MOSFETs from Cree. The latest breakthrough in silicon carbide (SiC) power device technology and the industry's first SiC 900V MOSFET platform, the C3M Power MOSFETs are optimized for high-frequency power electronic applications. The new 900V platform enables smaller and higher-efficiency next-generation power conversion systems while reducing system cost versus silicon-based solutions.

The Cree C3M SiC power MOSFETs, available from Mouser Electronics, feature high blocking voltage of 900V with low on-resistance, which limits power loss and reduces the need for additional cooling components. The C3M0065090J features the lowest on-resistance rating (65 mOhms) of any MOSFET device currently available on the market, and is offered in a low-impedance D2Pak-7L surface-mount package with a Kelvin connection to help minimize gate ringing. These N-channel MOSFETs provide gate driving optimized for +15V/-5V and continuous drain currents up to +/- 36A. The fast intrinsic body diode offers a reverse-recovery charge (Qrr) of 131nC for the C3M0065090D through-hole model and 134nC for the C3M0065090J surface-mount model.

Cree C3M SiC power MOSFETs

Mouser Electronics

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