DDR3 and DDR3L SDRAMs Provide Transfer Rates of 1600Mbps and Clock Rates of 800MHz

Date
01/04/2018

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SAN CARLOS, Calif. — Alliance Memory announced that it has expanded the industry's widest offering of high-speed CMOS DDR3 and low-voltage DDR3L SDRAMs with new 512Mb x8 and x16 devices in the 78-ball and 96-ball FBGA packages, respectively. Featuring a DDR architecture, the SDRAMs provide extremely fast transfer rates of 1600Mbps and clock rates of 800MHz.

With minimal die shrinks, the devices released today provide reliable drop-in, pin-for-pin-compatible replacements for numerous similar solutions used in embedded systems, desktop and notebook computers, industrial metering applications, consumer electronics, and wireless base stations — eliminating the need for costly redesigns and part requalification.

The 512Mb DDR3 SDRAMs operate from a single +1.5V (±0.075V) power supply, while the DDR3L SDRAMs operate from a single +1.35V power supply, with backward compatibility to 1.5V. The JEDEC-compliant devices are available in commercial (0°C to +95°C) and industrial (-40°C to +95°C) temperature ranges

The DDR3 and DDR3L SDRAMs support sequential and interleave burst types with read or write burst lengths of 4 or 8. An auto pre-charge function provides a self-timed row pre-charge initiated at the end of the burst sequence. Easy-to-use refresh functions include auto- or self-refresh. RoHS-compliant, the devices are lead (Pb)- and halogen-free.

Samples and production quantities of the new 512Mb DDR3 and DDR3L SDRAMs are available now, with lead times to eight weeks. Pricing for U.S. delivery starts at $1.75 per piece.

More information about Alliance Memory is available online at www.alliancememory.com.

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