Dual High-Precision Operational Amplifiers



Dual High Precision Operational Amplifiers

­Nisshinbo Micro Devices Inc. has launched the NL6012 series operational amplifiers intended for applications requiring high-precision measuring of delicate signals, such as Battery-Powered Equipment, Sensor Interfaces, Temperature Sensors, and Current Sensing Amplifiers.

Introducing the NL6012, an exceptional operational amplifier that demonstrates our strong commitment to precision and reliability. With a maximum input offset voltage of only 10 µV, and a maximum offset voltage drift of just 0.05 µV per degree Celsius, the NL6012 sets a new standard for accuracy.

By ensuring that electrical signals are accurately amplified and processed, the NL6012 minimises interference and reduces design time and costs. It is the ideal choice for instruments that require precise measurements.

Moreover, the NL6012 features an integrated EMI filter that protects systems from RF noises, ensuring accurate operation even in the noisiest environments. The wide supply voltage range from 2.1 V to 5.5 V, and the wide operation temperature range from -40°C to 125°C make it suitable for a wide range of applications.

Additionally, it has a low supply current, high-impedance rail-to-rail input, and rail-to-rail output that stays within 50 mV of the rail voltage. Its excellent Common-Mode Rejection Ratio (CMRR) eliminates crossover issues associated with traditional complementary input stages, ensuring superior performance when driving analog-to-digital converters without compromising differential linearity. The NL6012 comes in an 8-pin VSP package, product versions with alternative SOT-23-5 and SC-88A packages are under development.

Specifications NL6012:

Low Input Offset Voltage: 10 μV max.

Zero-Drift: 0.05 μV/°C max.

Low Supply Current (per Amplifier) NL6012: 15 μA/channel

Rail-to-Rail Input and Output

Supply Voltage: 2.1 V to 5.5 V

Input Bias Current: 30 pA

Gain Bandwidth Product: 260 kHz

Slew Rate: 0.11 V/μs

Equivalent Input Noise Voltage: 60 nV/√Hz

Integrated EMI Filter

CMOS Architecture

Package: VSP-8-AF (2.6 x 4.0 x 1.2 mm)


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