Efficient Power Conversion Corporation (EPC) Expands eGaN® FET Family with Second Generation 40 Volt, 16 milliohm Power Transistor

Date
08/27/2011

Categories:
DC-DC Converters, Gallium Nitride (GaN), Manufacturing & Assembly, MOSFETs & Power MOSFETs

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Efficient Power Conversion Corporation (www.epc-co.com) announces the introduction of the EPC2014 as the newest member of EPC's second-generation enhanced performance eGaN FET family. The EPC2014 is environmentally friendly; being lead free, RoHS-compliant (Restriction of Hazardous Substances), and halogen free. The EPC2014 FET is a 1.87 mm2, 40 VDS, 10 A device with a maximum RDS(ON) of 16 milliohms with 5 V applied to the gate. This eGaN FET provides significant performance advantages over the first-generation EPC1014 eGaN device. The EPC2014 has an increase in maximum junction temperature rating to 150 degrees C and is fully enhanced at a lower gate voltage than the predecessor EPC1014. Compared to a state-of-the-art silicon power MOSFET with similar on-resistance, the EPC2014 is much smaller and has many times superior switching performance. Applications that benefit from eGaN FET performance include high-speed DC-DC power supplies, point-of-load converters, class D audio amplifiers, hard-switched and high frequency circuits. "In addition to increases in performance, this new generation enhancement mode gallium nitride FET is offered as lead-free, halogen-free and RoHS-compliant," noted Alex Lidow, co-founder and CEO. In 1k piece quantities, the EPC2014 is priced at $1.12 and is immediately available through Digi-Key Corporation at digikey.com/Suppliers/us/Efficient-Power-Conversion.page?lang=en Design Support An application note detailing the performance improvements of the EPC2014 eGaN FET can be found at epc-co.com/epc/documents/product-training/Characteristics_of_Second_Generation_eGaN_FETs.pdf

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