EPC expands eGaN FET family with 100V 16mOhm power transistor

Date
09/17/2013

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Efficient Power Conversion introduced the EPC2016 as the newest member of EPC's family of enhancement mode gallium nitride power transistors. The EPC2016 is a 3.36 mm2, 100 VDS, 11 A device with a maximum RDS(on) of 16 milliohms with 5 V applied to the gate. This GaN power transistor delivers high performance due to its ultra high switching frequency, extremely low RDS(on), exceptionally low QG and in a very small package. Compared to a state-of-the-art silicon power MOSFET with similar on-resistance, the EPC2016 is much smaller and has many times superior switching performance. Applications that benefit from eGaN FET performance include high-speed DC-DC power supplies, point-of-load converters, class D audio amplifiers, and high frequency circuits. "The EPC2016 is an excellent complement to our existing family of eGaN FETs. The lower gate charge and output capacitances significantly reduce the switching losses in power conversion applications," noted Alex Lidow, co-founder and CEO. Additionally, the EPC9010 development board, featuring the EPC2016 devices and the LM5113 gate driver IC in a half bridge configuration, is available now. Development boards support designers in evaluating and incorporating eGaN FETs into their power conversion systems. In 1k piece quantities, the EPC2016 is priced at $1.61 and is immediately available Efficient Power Conversion

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