EPC releases SOA data for eGaN FETs


eGaN FETs exhibit positive temperature coefficient; overcome performance limitation of silicon MOSFETs

EPC (Efficient Power Conversion) is releasing safe operating area (SOA) data for their product line of eGaN FETs. The positive temperature coefficient across virtually their entire operating range allows a square SOA limited only by average device temperature. SOA is an indicator of the device's ability to transfer heat away from a resistive junction. The more efficient a device is at getting rid of generated heat, the lower thermal resistance, and the better the SOA performance. EPC's eGaN FETs have many major advantages over the power MOSFETs needed for today's high-performance applications. eGaN FETs offer superior device on-resistance while their positive temperature coefficients inhibit hot spot generation within the dice, resulting in superior Safe Operating Area capabilities. EPC SOA application note deeplink