EPC Space Introduces Radiation-Hard eGaN FETs for Next-Generation Space Computing
New 15 V, 25 V and 40 V eGaN FETs deliver ultra-low on-resistance, high current capability, and exceptional radiation immunity for high-density space power conversion
EPC Space, a manufacturer of radiation-hardened, high-performance, and enhanced-reliability GaN discrete transistors, integrated circuits, and modular devices, today announced three new eGaN® power transistors in plastic surface-mount packages, designed to deliver high-performance power conversion for next-generation space computing systems.
The EPC7050PCSH, EPC7066PCSH and EPC7065PCSH combine ultra-low on-resistance, high current capability and fast switching performance in compact PQFN packages with backside thermal pads. Their low conduction losses and world class switching figures of merit enable high efficiency and power density, all with zero reverse-recovery charge. Together, these characteristics enable smaller, more efficient power conversion solutions for space-constrained architectures. All three offer exceptional radiation immunity: TID > 1 Mrad, SEE LET(Si) 85 MeV cm2/mg, and neutron > 4E15 n/cm2.
The EPC7050PCSH is a 15 V device with 101 A continuous current capability and typical RDS(on) of 0.28 mΩ. The EPC7066PCSH is rated at 25 V and 101 A, with typical RDS(on) of 0.37 mΩ, while the EPC7065PCSH provides a 40 V rating, 101 A continuous current capability and typical RDS(on) of 0.5 mΩ.
All three products are designed for synchronous rectifier applications on the secondary side of intermediate bus converters with output in the range of 5V-12V, delivering an industry-leading low RDS(on) × QG figure of merit to enable higher-frequency and higher-efficiency operation. The devices also target point-of-load buck converters/IVRs supplying 0.8V core voltage for the processor.
“These devices target voltage regulator module (VRM), intermediate voltage regulation (IVR), point-of-load (POL), and intermediate bus converter (IBC) applications to power space compute assets such as the Versal SoC or NVIDIA GPUs,” said Bel Lazar, CEO of EPC Space. “They exhibit exceptional radiation hardness, including TID immunity and robustness to neutron and single-event effects, while offering electrical performance superior to the best silicon MOSFETs operating on the ground today.”
As AI and high-performance computing extend into space, the ability to deliver reliable power to increasingly demanding processors and accelerators is becoming a critical part of system design. EPC Space’s latest eGaN devices address this challenge by combining radiation robustness with the electrical performance and power density required by next-generation space compute platforms.
For 500-unit quantities engineering models are priced at 85 USD, and Rad Hard space qualified are priced at 125 USD.
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