The opening of the best-in-class facility, which is operating in close collaboration with technology partner CEA Tech, follows the launch of Exagan’s first GaN applications center in Taiwan last October.
The Toulouse facility provides customers with new application-development and product-validation capabilities using highly specialized electronic equipment. It also enables Exagan to master new architectures for GaN solutions while also boosting power-conversion efficiencies in current topologies.
Exagan’s technology and products are designed to offer customers the best value in device performance, robustness and ease of integration with existing platforms. G-FET power transistors can be fabricated in existing 200-mm CMOS wafer fabs, enabling a multi-source supply, easy scalability and optimal cost/performance benefits.
With its fab-lite business model, Exagan offers complete control of GaN technology integration from starting materials to full implementation in end products, enabling product optimization and volume manufacturing. The company’s product portfolio covers a wide range of power levels and applications, from small fast-charging systems, data centers and onboard automotive chargers up to fast-charging stations for electric vehicles.
“Building on a robust GaN technology and product portfolio, Exagan is now deploying GaN Power Solutions Centers in Europe and Asia to work closely with customers. Our goal is to deliver the best functionality and value by optimizing GaN devices’ industry-leading balance of power density, power efficiency, reliability and system costs,” said Frédéric Dupont, president and CEO of Exagan.
The market for GaN in power electronics is projected to increase at a compound annual growth rate (CAGR) of 93 percent by 2023, according to Yole Développement.