Fairchild, a leading global supplier of high-performance semiconductor solutions, is slashing energy loss by 30 percent for its 4th generation 650V and 1200V IGBT devices. Using a novel design approach tailored for high- and medium-speed switching applications in industrial and automotive markets, Fairchild can deliver industry-leading levels of performance with very strong latch up immunity for superior ruggedness and reliability. Fairchild is demonstrating and presenting the approach with test results of several applications at PCIM Europe 2015.
“Manufacturers are extremely interested in more advanced IGBTs as any reduction in an IGBT’s switching loss will enable them to improve the efficiency of their products,” said Senior IHS Analyst Victoria Fodale. “Minimizing power losses is naturally key to attaining the highest levels of efficiency in a range of applications from electric vehicles and solar power systems to highly-efficient HVAC applications and industrial inverters.”
Fairchild is applying an advanced high-density pitch, self-balancing cell build using a novel self-aligned contact technology for extremely high current densities and very favorable dynamic switching features over the whole temperature range from -40º C to 175º C. The new design enables 4th generation IGBTs with excellent low saturation voltage (Vce(sat) = ~ 1.65V) and low switching loss (Eoff = 5µJ/A) trade off characteristics for customers to achieve higher system efficiency. Along with the new generation, Fairchild will also make available a powerful design and simulation infrastructure package calibrated for all low- and high-voltage power devices.
“Fairchild’s new approach involves extremely high electron injection efficiency enhanced by a very fine cell pitch design and hole carrier injection restricted by a new buffer structure,” said Fairchild Fellow Thomas Neyer. “These advances yield significant performance advantages and will enable Fairchild to give manufacturers new solutions for efficiently controlling large amounts of power with our IGBTs.”
Fairchild Design Leader Kevin Lee will present “4th Generation Field Stop (FS) IGBT with High Performance and Enhanced Latch up Immunity” at 1 p.m. on Thursday, May 21, in the Nuremberg Exhibition Center’s Industry Forum Hall 6, booth 345.
Conference attendees can also see a demonstration of the new IGBT technology at Fairchild booth 9-342.
Product family details for Fairchild FS4 IGBT’s will be made available in Q4 of 2015.