GaN-on-SiC HEMT pulsed power transistor delivers high gain, efficiency and ruggedness

Date
05/03/2013

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M/A-COM Technology Solutions (M/A-COM), a leading supplier of high performance analog semiconductor solutions, introduced a market-leading GaN on SiC HEMT Power Transistor for L-Band pulsed radar applications. The MAGX-001214-500L00 is a gold-metalized pre-matched GaN on Silicon Carbide transistor optimized for pulsed L-Band radar applications. The MAGX-001214-500L00 provides 500W of output power with 19 dB of gain and 55% efficiency. The device also boasts very high breakdown voltages, which allows for operation at 50 V under more extreme load mismatch conditions. The device is assembled using state of the art design and packaging assembly, which enables the customer to reach higher gain and efficiency for today's demanding applications. "The transistor is a clear leader in high pulsed power GaN technology with 500W of output power combined with excellent gain, efficiency and rugged performance," said Paul Beasly, Product Manager. "The device is an ideal candidate for customers looking to upgrade L-Band radar systems to the next level of pulsed power performance and experience the solid reliability that is offered by M/A-COM's GaN Power Solutions." Operating between the 1200 MHz - 1400 MHz Frequency range, the MAGX-001214-500L00 is a highly robust transistor, boasting a mean time to failure (MTTF) of 5.3*106hours, and is available as both flanged and flangeless packaged devices. Samples of MAGX-001214-500L00are available from stock. M/A-COM

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