Mouser Electronics is now offering the GSP65RxxHB-EVB insulated metal substrate (IMS)-based evaluation platform from GaN Systems. The IMS evaluation platform demonstrates an inexpensive way to improve heat transfer, increase power density, and reduce system cost of power systems in automotive, consumer, industrial, and server or data center applications.
GaN Systems’ GSP65RxxHB-EVB IMS-based evaluation platform, available from Mouser Electronics, consists of the GSP65MB-EVB motherboard and two IMS evaluation modules that each includes a high-power, bottom-side-cooled GaN Systems GS66516B enhancement mode high electron mobility transistor (E-HEMT). The 650 V IMS evaluation modules are configured as a half bridge and are available in 13 milliohm, 2–4 kW and 25 milliohm, 4–7 kW variants. Together, the motherboard and IMS evaluation modules enable 10 different configurations, with two additional configurations when using a second motherboard. Designers can also use the IMS evaluation modules independently as a high-power gallium nitride (GaN) intelligent power module (IPM) with their own boards for in-system prototyping.
The evaluation modules offer very low inductance and feature an optimized driver board that minimizes both the power and gate driver loops. Typical applications include onboard chargers, DC/DC converters and three-phase inverters for electric and hybrid vehicles, industrial photovoltaic inverters and motor drives, switch mode power supplies for server/data centers and residential energy storage systems.
To learn more about GaN Systems’ IMS-based evaluation platform, visit www.mouser.com/gan-ims-3rd-gen-eval-boards.