GaN Systems’ power semiconductors now offer topside cooling

Date
03/16/2015

Categories:
Discrete Components, Embedded Systems, Gallium Nitride (GaN), Manufacturing & Assembly, Power Management, Power Semiconductors, Thermal Management

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GaN Systems announced new topside cooling technology

GaN Systems, a leading developer of gallium nitride power switching semiconductors, announced new topside cooling technology in its wide range of high-power enhancement-mode devices. Topside cooling enables engineers to use conventional, well-understood PCB cooling techniques when incorporating GaN Systems’ market-leading semiconductors into their latest designs for products such as inverters, UPS, hybrid electric vehicles/electric vehicles, high voltage DC-DC conversion and consumer products such as TVs.

GaN Systems’ gallium nitride power transistors are based on its proprietary Island Technology® - the die consist of islands rather than traditional fingers, which brings significant advantages in terms of better current handling, lower inductance, scaling, isolation and thermal management, as well as enabling smaller die and lowering cost. GaN Systems’ enhancement-mode devices with current ratings ranging from 8A to 250A are delivered in its proprietary GaNPX packaging: the die is embedded within a laminate construction and a series of galvanic processes replace conventional techniques such as clips, wire bonds and moulding compounds.

These near-chipscale high power switching transistors are now packaged to be cooled via the topside of the chip using a heat sink or fan – conventional techniques that are well-understood and familiar to design engineers who may be unfamiliar with using GaN devices or using them for the first time. GaN transistors can also be cooled from the bottom surface of the die through conduction to the PCB.

GaN Systems

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