GaN Systems, a leading developer of gallium nitride power switching semiconductors, is exhibiting and presenting a technical paper at iPower 2013 Conference and Exhibition, Warwick University on 27 and 28 November. Organised by IMAPS-UK and NMI in conjunction with the University’s Electronics, Power and Microsystems Research Group, iPower 2013 brings together leading experts from industry, science, supply and academia to focus on the latest developments in power electronic products and technologies.
The second day of the Conference is devoted to the packaging industry and the opportunities presented by higher power, faster semiconductors for power conversion products. Geoff Haynes, VP Business Development, is presenting a paper entitled “Breaking the Bonds” that highlights the extreme performance gains in switching speed and potential junction operating temperature GaN switches bring to the industry. He will explore and discuss overcoming the challenges these new devices present and how to harness them to greatest effect, achieving savings through intelligent use of increased power during peak production.
At the exhibition running alongside the conference, GaN Systems will showcase its gallium nitride high power transistors for clean power conversion applications based on its proprietary Island Technology™. These new devices have exceptionally low on-resistance and negligible charge storage, so their switching efficiency performance is far superior to current silicon semiconductors. GaN semiconductors bring dramatic benefits to switching power supplies, inverters, hybrid and electric vehicles, battery management and power factor correction.
