GaN Systems, a leading developer of gallium nitride power switching semiconductors, is exhibiting at PCIM (Power Conversion Intelligent Motion) on Booth 523 in Hall 9. PCIM focuses on power electronics and its applications in intelligent motion, renewable energy and energy management and the company has selected this major European exhibition as the ideal platform to reveal its latest developments and make two major announcements on its gallium nitride power semiconductors.
Larry Spaziani is presenting a paper at the PCIM Conference entitled "Lateral GaN Transistors – A Replacement for IGBT devices in Automotive Applications" written by John Roberts, Chief Technical Officer GaN Systems. The paper explains the performance improvements that GaN devices achieve in drive train power requirements for hybrid and electric vehicles. Worldwide, several groups of researchers are undertaking work on replacing Silicon IGBTs in these applications. Spaziani will present results achieved by GaN Systems’ devices, which are based on its unique Island Technology IP. The presentation will include a comparison between the company’s products and competitive offerings.
Also at PCIM, GaN Systems will make two major announcements: the forthcoming commercial availability of its GaN high current devices and 100V process qualification.