Gen 3 GaN power ICs Support new Ultrafast Mobile Charging



Navitas Semiconductor announced details of how its gallium nitride (GaN) semiconductors - GaNFast power ICs with GaNSense technology - are used to ultra-fast-charge Xiaomi’s new Note 11 Pro+ flagship smartphone.

Xiaomi’s advanced power management and leading-edge graphene Li-Ion battery technology allows ultrafast-charging, with a powerful 120W capability to charge the 4,500 mAhr battery from 0-100% in only 17 minutes. GaNSense technology delivers the smallest, most efficient, most portable 120W charger to enable this new-benchmark ultrafast performance.

Gallium nitride (GaN) devices are the leading-edge of power semiconductor technology, operating 20x faster than traditional silicon chips, and can achieve up to 3x more power or 3x faster charging in half the size and weight. Navitas’ GaNFast power ICs integrate GaN power, GaN drive, protection and control. New GaNSense technology delivers another 10% energy savings plus autonomous system-parameter sensing and high-speed protection features for maximum reliability. GaNSense technology enables the GaN power IC to detect and protect in less than 30 ns.

The Xiaomi 120W measures only 55 x 55 x 28.4 mm (86 cc), weighs only 138 g and achieves an industry-leading power density of 1.4 W/cc. Two NV6134 GaNFast power ICs with GaNSense technology are used in the 120W charger; one in the front-end boost power-factor correction (PFC) section, and the other in the downstream high-frequency quasi-resonant (HFQR) DC-DC stage, utilizing a high-speed, low-profile planar transformer.

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