GOLETA, Calif.— Transphorm Inc. announced that its third generation, JEDEC-qualified high voltage GaN platform has passed the Automotive Electronics Council’s AEC-Q101 stress tests for automotive-grade discrete semiconductors. This achievement marks the company’s second automotive-qualified product line. And, notably, its most reliable given the Gen III GaN platform’s ability to perform at 175°C during qualification testing.
Transphorm’s Gen III AEC-Q101 GaN FET, the TP65H035WSQA, offers a typical on-resistance of 35 mΩ in an industry standard TO-247 package. As with its predecessor—the 50 mΩ Gen II TPH3205WSBQA—the devices target AC to DC on-board chargers (OBCs), DC to DC converters and DC to AC inverter systems for plug-in hybrid electric vehicles (PHEVs) and battery electric vehicles (BEV).
Unmatched Reliability Thresholds
Launched in June 2018, Transphorm’s Gen III devices came onto the market as the highest reliability, highest quality [Q+R] GaN FETs available. They offered lower electromagnetic interference along with increased noise immunity [threshold voltage at 4 V] and gate robustness [at ±20 V]. These advances produced quieter switching and higher performance at higher current levels with minimal external circuitry.
That commitment to Q+R influences Transphorm’s choice to conduct extended and accelerated standards testing, to include JEDEC and AEC-Q101. For this latest automotive qualification, the semiconductor manufacturer stressed the devices’ thermal limits to 25°Cmore than those of the standard AEC-Q101-qualified high voltage Silicon MOSFET counterparts.
Beyond proving the GaN platform’s robustness, the higher temperature testing demonstrates that Transphorm’s AEC-Q101 GaN FETs will give design engineers ample thermal headroom when developing any power system.
The company’s second AEC-Q101 qualified device further validates Transphorm’s Q+R, as was also demonstrated in the January 2019 release of the industry’s first Field Reliability data and first Early Life Failure rate calculations–the source of the FIT rate referenced above.