High performance MOSFET from Advanced Power Electronics offers very low on-resistance

Date
01/14/2014

Categories:
Discrete Components, Embedded Systems, MOSFETs & Power MOSFETs, Power Management, Power Semiconductors

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AP1A003GMT-HF-3 power MOSFET

Advanced Power Electronics, a leading manufacturer of MOS power semiconductors for DC-DC power conversion applications, has recently released the AP1A003GMT-HF-3 power MOSFET with very low maximum on-resistance of only 0.99mΩ for use in high current load switching where a very low voltage drop across the MOSFET switch is required to minimise the conduction losses.

Provided in a PMPAK5x6 package with integrated thermal pad and with a standard SO-8 footprint compatible with other enhanced 5x6mm power packages, the AP1A003GMT-HF-3 power MOSFET features simple gate drive requirements, a breakdown voltage rating of 30V and a maximum drain-source current rating of 260A.

The AP1A003GMT-HF-3 power MOSFET is fully RoHS-compliant and BFR/halogen-free. Samples are available now.

Advanced power Electronics

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