High-Power Density 350 V GaN Half Bridge IPM is 60% Smaller Than Silicon Solutions


Sensitron introduces the SPG025N035P1B GaN half-bridge module using the 350 V EPC2050 eGaN FET from Efficient Power Conversion

­Reducing size and cost were key concerns of Sensitron when designing their latest generation GaN power modules. By replacing traditional silicon FETs with EPC’s 350 V, EPC2050 GaN FET, Sensitron was able to reduce the size of their solution by 60% while also improving the module’s already excellent junction-to-case thermal conduction. The SPG025N035P1B from Sensitron is a high-power density 350 V, 20 A GaN half bridge with an integrated gate drive, optimized for stray inductance and switching performance at 500 khz. Rated at 20 A, the module can be used to control over 3 kW. Sensitron’s proprietary topside cooling technology on this ultra-small, lightweight high power density package (1.10" x 0.70" x 0.14") allows for optimal thermal performance. The SPG025N035P1B was designed for commercial, industrial, and aerospace applications.

The SPG025N035P1B module uses the EPC2050, a 350 V rated GaN FET with 80 mΩ maximum RDS(on), 26 A peak current power in an extremely small chip-scale package that measures just 1.95 mm x 1.95 mm.  The EPC2050 provides Sensitron with a high efficiency solution due to the low switching losses, and a high-power density solution due to the extremely small size. The EPC2050 is also ideal for multi-level converters, EV charging, solar power inverters, lidar, and LED lighting.

For more information, go here.