II-VI Advanced Materials, a leading supplier of
single crystal SiC (silicon carbide) substrates and CVD-grown
polycrystalline diamond materials, recently exhibited the world's first
200mm diameter SiC wafer at the 2015 Compound Semiconductor
Manufacturing Technology (CS MANTECH) conference in Scottsdale, AZ and
the International SiC Power Electronics Applications Workshop
(ISiCPEAW) in Stockholm, Sweden.
Dr. Thomas Anderson, General Manager of II-VI Advanced Materials said,
"This achievement is a direct result of our consistent focus on
providing the market with leading-edge quality substrates at the
diameters required to enable more cost effective semiconductor device
manufacturing. The earlier introduction of our 150mm diameter SiC
substrates was extremely well received by our customers, and
significant growth in the demand reflects market recognition of the
improved economics of SiC device manufacturing at increased diameters.
Devices built on these substrates will be or are currently being
utilized in a wide range of applications requiring high power density
and system efficiency, such as electric vehicles, inverters for PV
solar energy and other renewable energy installations."
This development program builds upon years of work funded, in part, by
the U.S. Air Force Research Laboratory (AFRL). It focused on the
manufacturing scale-up of the II-VI Advanced Physical Vapor Transport
(APVT) SiC crystal growth technology as well as the development of
state-of-the-art fabrication, polishing and cleaning processes. These
efforts have resulted in achievement of world-class quality material
while at the same time increasing the diameter from 3" to 100mm, then
to 150mm and now to the world's first 200mm SiC substrates.
"This 200mm SiC wafer demonstrates our market leading crystal growth
and fabrication technologies, as well as our commitment to respond to
and work with our customers to ensure a smooth transition to the next
generation of substrates. We are dedicated to pushing the boundaries of
SiC substrate technology to ensure that the market has the material it
needs to make high performance SiC based devices both cost effective
and widely utilized," commented Dr. Andrew Souzis, Director of Business
Development.
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