Infineon's latest 80V and 100V power MOSFETs claim lowest on-state resistance




Infineon Technologies extends its OptiMOS 5 portfolio with 80V and 100V variants. This latest generation of Power MOSFETs is optimized for high switching frequencies especially used in synchronous rectification applications for telecom and server power supplies as well as in industrial applications such as solar, low voltage drives and power adapter. The new OptiMOS 5 MOSFETs offer the industry’s lowest on-state resistance (R DS(on)) – up to 45% reduction for 80V and up to 24% reduction for 100V compared to the previous generation. Due to the lower resistance there is significantly less need to parallel parts resulting in reduced material cost. The newly introduced generation offers the highest levels of power density and energy efficiency.

In comparison to the previous generation, the OptiMOS 5 80V variant offers 38% reduction in output charge and the OptiMOS 5 100V variant a 25% reduction. Less output charge means reduced switching losses and lower voltage overshoot in hard switching topologies and synchronous rectification. This results in faster design and lower development costs. Moreover, the reduction in gate charge of 24% for 80V and 29% for 100V also reduces switching losses especially at light load operation and in applications requiring high efficiency throughout the whole load range, such as micro-inverters and power optimizers for solar applications.

OptiMOS5 80V and 100V are offered in seven different packages: SuperSO8, S308, TO-Leadless, TO-220, TO-220 FullPAK, D²PAK and D²PAK 7Pin with R DS(on) ranging from 1-4 mΩ, 4-8 mΩ and 8-2 mΩ for 80V and 1-4 mΩ, 4-8 mΩ and 8-10 mΩ for 100V. Samples are available in both voltage classes and all packages. Products are in volume production.

OptiMOS 5 80V and 100V portfolio