International Rectifier, power management technology leader, has introduced a new generation of IGBT (Gate Bipolar Transistor) technology platform. Gen8 (Generation 8) 1200V IGBT platform uses IR's latest generation trench gate field stop technology to offer best-in-class performance for industrial and energy saving applications. The new Gen8 design allows best-in-class Vce(on) to reduce power dissipation, increase power density, and deliver superior robustness. "With the development of this new benchmark technology and state-of-the-art IGBT silicon platform, IR underlines its decades of commitment to the advancement of power electronics technology. Our goal is to achieve 100% inverterization of all electric motors for a more efficient use of electric energy and a greener environment," says Alberto Guerra, VP Strategic Marketing, Energy Saving Products Business Unit. The new technology offers softer turn-off characteristics ideal for motor drive applications, minimizing dv/dt to reduce EMI, and over-voltage, increasing reliability and ruggedness. A narrow distribution of parameters offers excellent current sharing when paralleling multiple IGBTs in high-current power modules. The thin wafer technology delivers improved thermal resistance and maximum junction temperature up to 175°C. "IR's Gen8 IGBT platform offers a superior technology targeting industrial applications. With best-in-class Vce(on), robustness and excellent switching characteristics, this IGBT platform has been specifically tailored to achieve the demanding challenges of the industrial market," said Llewellyn Vaughan-Edmunds, IGBT Product Marketing manager, IR's Energy Saving Products Business Unit. International Rectifier
