International Rectifier has expanded its portfolio of rugged, reliable ultra-fast 600 V Trench Insulated Gate Bipolar Transistors (IGBTs) with the introduction of the IRGP4067DPbF and IRGP4066DPbF devices for uninterruptible power supplies (UPS), solar, industrial motor and welding applications. The IRGP4067DPbF and IRGP4066DPbF utilize Trench thin wafer technology to offer lower conduction and switching losses. Co-packaged with a soft recovery low Qrr diode, the new devices are optimized for ultra-fast switching (8KHz-30KHz) with 5us short circuit rating and feature low Vce(on) and positive Vce(on) temperature coefficient for easy paralleling. The new 600 V IGBTs are suitable for a wide range of switching frequencies due to their low Vce(on) and low switching losses while offering higher system efficiency and rugged transient performance for increased reliability. Offered as both die and packaged devices, and available with or without short-circuit rating, other key features of the new devices include maximum junction temperature of 175 °C and low EMI for improved reliability. Production quantities are available immediately. Datasheets and an IGBT online selection tool are available on the International Rectifier website at www.irf.com. The selection tool can be accessed directly at mypower.irf.com/IGBT.