IR’s latest high-density FastIRFET in 4x5 PQFN packaging offers a compact solution for DC-DC apps

Date
12/12/2014

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IRFH4257D FastIRFET dual power MOSFET

International Rectifier, a leader in power management technology, announced the introduction of the IRFH4257D FastIRFET dual power MOSFET housed in a high performance 4x5 PQFN power block package. The new package option expands the power block family’s capability to lower power for compact designs in 12V input DC-DC synchronous buck applications including advanced telecom and netcom equipment, servers, graphic cards, desktop, Ultrabook and notebook computers.

 

The IRFH4257D features IR’s latest generation silicon and proprietary packaging technology which offers excellent thermal performance, low on-state resistance (RDS(on)) and gate charge (Qg). These features deliver superior power density and lower switching losses in a compact 4x5 power block.

 

“As with all of IR’s FastIRFET™ devices, the IRFH4257D works with any controller or driver to offer flexibility while delivering higher current, efficiency and frequency capability in single phase or multiphase applications. Now, with the addition of the IRFH4257D, designers have the option to choose a 4x5 or 5x6 PQFN to suit their design requirements,” said Stephane Ernoux, Director of Marketing, IR’s Power Management Devices Business Unit.

 

The IRFH4257D is qualified to industrial grade and moisture sensitivity level 1 (MSL1), and features an environmentally friendly, lead-free and RoHS compliant bill of materials.

International Rectifier

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