NEWS: PRODUCT NEWS

    KIOXIA Commences Sample Shipments of 9th Generation BiCS FLASH 512Gb TLC Devices

    07/25/2025
    Combine Existing Memory Cell and Advanced CMOS Technologies to Maximize Investment Efficiency
    Axel Störmann, Vice President and Chief Technology Officer for Memory and SSD products, KIOXIA Europe GmbH

    ­KIOXIA Europe, a world leader in memory solutions, announced it has commenced sample shipments of 512Gb Triple-Level Cell (TLC) memory devices incorporating its 9th generation BiCS FLASH™ 3D flash memory technology. It plans to begin mass production in fiscal year 2025. The devices are designed to support applications requiring high performance and exceptional power efficiency in low- to mid-level storage capacities. They will also be integrated into KIOXIA’s enterprise SSDs, in particular those that aim to maximise GPU efficiency in AI systems.

    KIOXIA continues to pursue a dual-axis strategy to address the diverse needs of cutting-edge applications, delivering competitive products while providing optimal investment efficiency. The two axes are:

    • 9th generation BiCS FLASH™ products: these achieve high performance at reduced production cost by leveraging CBA (CMOS directly Bonded to Array) technology, which integrates existing memory cell technologies with the latest CMOS technology. 
    • 10th generation BiCS FLASH™ products: these incorporate an expansion in the number of memory layers to meet the expected future demand for larger-capacity, high-performance solutions. 

    The new 9th generation BiCS FLASH™ 512Gb TLC, developed using a 120-layer stacking process based on 5th generation BiCS FLASH™ technology and advanced CMOS technology, exhibits significant performance improvements over KIOXIA’s existing BiCS FLASH™ products with the same 512Gb capacity. These include:

    • Write performance: 61% improvement
    • Read performance: 12% improvement
    • Power efficiency: enhanced by 36% during write operations and 27% during read operations
    • Data transfer speed: the Toggle DDR6.0 interface enables high-speed 3.6Gb/s[⁵]NAND interface performance
    • Bit density: increased by 8% through advancements in planar scaling

    Additionally, KIOXIA has confirmed that the 512Gb TLC operates at NAND interface speeds of up to 4.8Gb/s under demonstration conditions.  

    The product line-up will be determined in accordance with market demands.  

    "TLC's advantages of higher storage density, cost effectiveness and performance offered through KIOXIA's 9th generation BiCS FLASHTM 3D flash memory will be well-suited for Internet of Things devices and embedded systems in the industrial and automotive sector where cost and capacity are most important. It will also provide affordable, high-capacity storage through Cloud Storage Services and read-heavy tasks like seen in AI and Machine Learning," adds Axel Störmann, Vice President and Chief Technology Officer for Memory and SSD products, KIOXIA Europe GmbH.

    Visit the KIOXIA website

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