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Low-Power SRAM Offers a Fast Access Time of 55ns


SAN CARLOS, Calif. — To meet the demand for low-power SRAMs with higher densities, Alliance Memory today introduced a new 64Mb (4M x 16 bit) device in 48‑pin, 12mm by 20mm TSOP-I and 48-ball TFBGA packages. Available from a very limited number of suppliers, the AS6C6416-55 operates from a single power supply of 2.7V to 3.6V and offers a fast access time of 55ns.

The device released today features low power consumption with a typical operating current of 12mA and standby current of 12µA. The IC provides high reliability and power savings for low-power portable electronics and industrial automation, telecom, medical, and broadcast equipment, and is particularly well-suited for battery backup non-volatile memory.

The AS6C6416-55 is fabricated using very high-performance, high-reliability CMOS technology, and its standby current is stable within the operating temperature range of -40°C to +85°C. The RoHS-compliant device offers fully static operation and tri-state output, and it features a data retention voltage of 1.2V minimum. All inputs and outputs are fully TTL-compatible.

The new IC provides a reliable drop-in, pin-for-pin-compatible replacement for a number of similar solutions. The AS6C6416-55 is the latest in the company's full range of low-power SRAM products, which include devices with densities of 64K, 256K, 1M, 2M, 4M, 8M, 16M, 32M, and now 64M.

Link to product datasheet and ordering information:

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