Microsemi launches RF transistor for aviation radar

Date
09/01/2012

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Several additional GaN on SiC transistors in development

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GaN on SiC device

Microsemi has announced its 1011GN-700ELM, the first in a family of RF transistors for high-power ATC (air traffic control) and SSR (secondary surveillance radio) applications used to send messages to aircraft equipped with radar transponders and collect information that allows air-traffic controllers to identify, track, and measure the location of particular airplanes. Microsemi's new 700-W peak 1011GN-700ELM operates at 1030 MHz and supports short- and long-pulsed ELM (extended length message). The new transistor is based on GaN on SIC technology, particularly well-suited for high-power electronics applications. "We are aggressively driving the development of next-generation GaN on SiC power devices to address growing opportunities for higher performance aerospace and military applications," said David Hall, VPt of Microsemi's RF Integrated Systems product group. "With today's new product introduction, we now offer highly reliable GaN on SiC transistors at 250, 500 and 700 watts for secondary surveillance radar search and tracking applications. We also have several additional GaN on SiC transistors in development that we will be rolling out later this year." Microsemi's upcoming product lineup includes multiple high-pulsed power GaN on SiC transistors for L-, S-, and C-band radar systems. The company also offers a suite of GaN microwave power devices, which includes the following S-band radar models: 2729GN-150, 2729GN-270, 2731GN-110M, 2731GN-200M, 3135GN-100M, 3135GN-170M, 2735GN-35M and 2735GN-100M. Several new products are in development for L-band avionics products covering 960-1215 MHz; L-band radar covering 1200-1400MHz; and S-band radar, higher power devices covering 2.7-2.9 GHz. About the 1011GN-700ELM RF Transistor The 1011GN-700ELM transistor delivers 700 W of peak power with 21 dB of power gain and 70% drain efficiency at 1030 MHz to reduce overall drain current and dissipation. Other key product features include:

  • Short- and long-pulse burst formats
  • Output power: 700 W
  • High power gain: 21 dB min
  • Controlled dynamic range: 1.0dB increments, 15 dB total
  • Drain bias - Vdd: +65 V
Systems benefits with GaN on SiC HEMT:
  • Single-ended design with simplified impedance matching, replacing lower power devices that require additional levels of combining
  • High peak power and power gain for reduced number of system power stages and final stage combining
  • Single stage pair provides 1.3 kW with margin, four-way combined to provide full system 4 kW
  • High operating voltage at 65 V reduces power supply size and DC current demand
  • Extremely rugged performance improves system yields
  • Amplifier size is 50% smaller than devices built with Si BJT or LDMOS
Packaging and Availability The 1011GN-700ELM is available in a single-ended package and is built with 100% high-temperature gold metallization and wires in a hermetically solder-sealed package for long-term military reliability. Microsemi offers demo units on loan to the customer for a few weeks; due to the cost of the product free samples are not provided. Demo units available now to qualified customers. Microsemi

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