Microsemi's new SiC Schottky diodes improve electrical power conversion efficiency

Microsemi has introduced a new family of 1200 V SiC Schottky diodes. The new diodes are targeted at a wide range of industrial applications including solar inverters, welders, plasma cutters, fast vehicle chargers, oil exploration, and other high-power, high-voltage applications where power density, higher performance, and reliability are important. SiC offers a number of benefits compared to Si including a higher breakdown field strength and improved thermal conductivity. These attributes allow designers to create devices with better performance characteristics including zero reverse recovery, temperature independent behavior, higher voltage capability, and higher temperature operation to achieve new levels of performance, efficiency, and reliability. In addition to the inherent benefits of the device, Microsemi is the only manufacturer to offer a SiC Schottky diode in a large surface mount backside solderable D³ package allowing designers to achieve increased power density and lower manufacturing costs. The new 1200 V SiC Schottky diode product portfolio includes:

• APT10SCD120BCT (1200 V, 10 A, common cathode TO-247 package)
• APT20SCD120B (1200 V, 20 A, TO-247 package)
• APT30SCD120B (1200 V, 30 A, TO-247 package)
• APT20SCD120S (1200 V, 20 A, D³ package)
• APT30SCD120S (1200 V, 30 A, D³ package)