Mitsubishi Electric introduces 6th-gen mega-power dual IGBT modules

Mitsubishi Electric has introduced its 6th generation MPD (mega-power dual) IGBT modules for use in power converters such as large-capacity photovoltaic and wind-power generation systems and other high-power applications such as UPS and AC-motor control. The new modules' 6th generation CSTBT (carrier-stored trench-gate bipolar transistor) reduces collector-emitter saturation voltage by approximately 15% and the gate capacitance by 30% to 50% compared to 5th generation MPD modules. Furthermore, Mitsubishi has raised the maximum junction temperature to 175 °C. The new 6th generation MPD IGBT modules are compatible to the 5th generation IGBT modules in terms of dimensions, shape, and pin configuration. The company has raised the isolation voltage to 4 kV. Modules in the new series include the CM900DUC-24S (1.2 kV, 900 A), CM1400DUC-24S (1.2 kV, 1.4 kA), and CM1000DUC-34SA (1.7 kV, 1 kA). All are fully RoHS compliant. Power generation systems are increasingly shifting to natural energy sources, such as wind and solar power, as part of efforts to limit CO₂ emissions attributed to global warming. The 6th generation MPD Series responds to the growing need for robust power-conversion equipment in newer, large-scale megawatt-class systems. 5th generation series modules have been successfully in use since 2002. Mitsubishi Electric Europe