The QPA2308 provides high-power density and power-added efficiency for 5 to 6 GHz radio frequency (RF)-based designs. Fabricated on Qorvo’s production 0.25 um gallium nitride-on-silicon carbide (GaN-on-SiC) process, this monolithic microwave integrated circuit (MIMC) power amplifier simplifies system integration and offers impressive performance in a compact 15.24 × 15.24 mm bolt-down package.
The Qorvo QPA2308 power amplifier, available from Mouser Electronics, features greater than 60 W of saturated output power and over 21 dB of large-signal gain. The device’s power-added efficiency (PAE) is rated at greater than 47 percent, and the RF output power where the device starts to draw positive gate current (PSAT) is measured at 48 dBm. Input return loss for the amplifier is specified at 14 to 23 dB, while the output return loss is 13 dB. To simplify system integration, the QPA2308 also supplies two RF ports that are fully matched to 50 ohms, each integrated with DC blocking capacitors.
Qorvo’s QPA2308 has an operating temperature of minus 40 to 85 degrees Celsius, and a power dissipation of 140 W (at 85 degrees Celsius). The RoHS compliant amplifier is ideal for RF applications such as C-Band Radars, satellite (Satcom) and space communications, and electronic warfare technologies.
Mouser is also stocking the QPA2308EVB1 evaluation board. Made from Rogers RO6035HTC dielectric, a high-reliability material used specifically in aerospace and defense-based projects due to its dielectric constant and low loss, the PCB on the evaluation board features .01-inch thick, 0.5-ounce copper on both sides.
www.mouser.com/qorvo-qpa2308-mmic
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