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Navitas Unveils Next-Generation Ultra-High-Voltage SiC Power Module to Advance Energy and Grid Infrastructure Efficiency
10/21/2026
Latest 2300 V, 8 mΩ full-bridge SiCPAK™ G power module leverages proprietary GeneSiC™ Trench-Assisted Planar™ technology to deliver the industry's leading RDSON, enabling higher and power density for solid-state transformers, grid-scale battery ene
Navitas Unveils Next-Generation Ultra-High-Voltage SiC Power Module to Advance Energy and Grid Infrastructure Efficiency
Navitas Semiconductor, a leader in next-generation power semiconductors and power delivery solutions, pioneering GaN, high-voltage and ultra-high-voltage SiC, and IVR technologies, today announced an ultra-high-voltage (UHV) SiC power module family for advanced energy and grid infrastructure.
The new G4H08MT23GB4 2300 V full-bridge module family uses the industry-standard SiCPAK™ form factor and has a class-leading RDSON (8 mΩ).
It has been developed to enhance efficiency and power density in solid-state transformers, grid-scale battery energy storage systems, solar inverters, and EV megawatt charging infrastructure. These gains are enabled through its deployment of Navitas' fourth-generation GeneSiC™ Trench-Assisted Planar™ (TAP) architecture, with the launch extending Navitas' 2300 V and 3300 V ultra-high voltage SiC portfolio.
As grid-tied power architectures increasingly underpin next-generation AI data centers, Navitas' UHV SiC modules provide the medium-voltage building block for solid-state transformers that convert grid power directly into the high-voltage DC rails used inside AI data center racks. This places the new module family at the center of Navitas' AI infrastructure portfolio. spanning AI data center and energy and grid infrastructure alongside battery energy storage, solar, EV megawatt charging, hydrogen fuel cell electrolysis and DC-DC conversion, and industrial motor-drive and high-voltage power supply applications.
Advanced Construction for High-Reliability, High-Power Operation
The modules also integrate several construction enhancements that better meet the needs of demanding, high-power applications. For example, its aluminum nitride (AlN) active-metal-braze (AMB) substrate enables superior heat spreading and supports an isolation capability of over 5 kV. Its epoxy-resin potting technology reduces internal stress distribution, limits moisture and contaminant ingress, and delivers 10x improvements in thermal conductivity versus silicone gel.
Additionally, the module’s high-current, press-fit pins have twice the current-carrying capability per pin versus standard press-fit connections. An optional pre-applied thermal interface material (TIM), which simplifies and standardizes heatsink assembly, is also available.
Extended Reliability Testing Validates Long-Term System Lifetime
The new module family will be qualified to Navitas' AEC-Plus* reliability benchmark, which tests beyond AEC-Q101 and JEDEC standard requirements. The benchmark reflects Navitas' focus on system-level lifetime requirements for the demanding mission profiles found in energy and grid infrastructure applications.
The AEC-Plus qualification includes dynamic reverse bias (DRB) and dynamic gate switching (DGS) testing to represent stringent fast-switching application mission profiles; it also more than triples the duration of static high-temperature, high-voltage tests (HTRB, HTGB, HTGB-R). Additionally, it implements an extended power-cycling and temperature-cycling testing and delivers HV-H3TRB (HV-THB) qualification for power modules, discrete and known-good-die (KGD) devices.
“Our fourth-generation GeneSiC Trench-Assisted Planar architecture continues to push the limits of what's possible in ultra-high voltage SiC,” said Paul Wheeler, VP & GM of Navitas' SiC Business Unit. “This new 2300 V module delivers a leading RDS(ON) of any device using the SiCPAK form factor, giving system designers a proven, reliability-tested building block for the solid-state transformers and energy storage systems that are reshaping grid and AI data center infrastructure.”
Samples of the G4H08MT23GB4(HC) family are available immediately, with options for pre-applied TIM and high-current variants:
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Part Number
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Configuration
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Pre-Applied TIM
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Pins
|
|
G4H08MT23GB4
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Full-Bridge
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No
|
Standard
|
|
G4H08MT23GB4-T
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Full-Bridge
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Yes
|
Standard
|
|
G4H08MT23GB4HC
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Full-Bridge
|
No
|
High-Current
|
|
G4H08MT23GB4HC-T
|
Full-Bridge
|
Yes
|
High-Current
|
A double-pulse test (DPT) system, EVB-UHVSIC-GB-E-DPT-1, is also available on request. This has been created to help engineers evaluate the device's switching performance.
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