New 40V and 60V Vishay Siliconix N-Channel TrenchFET® Power MOSFETs Feature Industry-Low On-Resistance and FOMs in PowerPAK® SO-8 Package



Vishay Intertechnology, Inc. (NYSE: VSH) today introduced new 40V and 60V n-channel TrenchFET® power MOSFETs with the industry's lowest on-resistance and on-resistance times gate charge figures of merit (FOM) for devices with these voltage ratings in the SO-8 or PowerPAK® SO-8 packages. The 60V SiR662DP offers on-resistance of 2.7m? at 10V and 3.5m? at 4.5V and an FOM of 172.8m?-nC at 10V and 105m?-nC at 4.5V. The device's on-resistance values at 10V and 4.5V are 3.5% lower and 27% lower than those of the closest competing MOSFET, respectively, while its FOM is 23% lower at 10V and 57% lower at 4.5V. These low values will reduce switching losses across the whole operating range of the device. The 40V SiR640DP offers on-resistance of 1.7m? at 10V and 2.2m? at 4.5V and an FOM of 128m?-nC at 10V and 76m?-nC at 4.5V. The device's on-resistance value at 4.5V is 4% lower than the next-best competing MOSFET while its FOM is 15.5% lower at 4.5V. Both devices are built on a new silicon technology utilizing an optimized trench density and a unique gate structure. For designers, their lower on-resistance translates into lower conduction losses for reduced power consumption, especially at heavy loads. Their low FOMs reduce switching losses in high-frequency and switching applications, particularly at light loads and standby mode. The devices' high efficiency allows designers to increase the power density of their systems and/or provide lower power loss in greener solutions. The SiR662DP and SiR640DP are intended for secondary-side synchronous rectification in DC/DC and AC/DC converters, primary-side switching in DC/DC converters, point-of-load modules, motor drives, bridge inverters, and mechanical relay replacement applications. Typical end products will include telecom power supplies, industrial automation and professional gaming systems, uninterruptible power supplies (UPS), and consumer applications. The MOSFETs' 4.5V rating will give many designers the opportunity to use a 5V power rail in their systems, already present for powering digital logic, without having to create and find space for a 10V power rail. The 4.5V rating will also significantly lower gate drive losses while allowing the user of lower-voltage, lower-cost 5V PWM ICs. Both devices are 100% Rg- and UIS-tested. They are halogen-free according to the IEC 61249-2-21 definition and compliant to RoHS Directive 2002/95/EC. Samples and production quantities of the SiR662DP and SiR640DP are available now, with lead times of 16 weeks for large orders. Vishay can be found on the Internet at