Nexperia Launches High-efficiency GaN FET

Date
11/21/2019

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Nexperia has entered the GaN FET market with the 650V GAN063-650WSA, a robust device with a gate-source voltage of +/- 20 V and a temperature range of -55 to +175 °C.

The GAN063-650WSA features a low RDS(on) - down to 60 mΩ - and fast switching to offer very high efficiency.

Nexperia is targeting high performance application segments including xEV, datacentres, telecom infrastructure, industrial automation and high-end power supplies. Nexperia’s GaN-on-silicon process is very robust and mature with proven quality and reliability, plus it is highly scalable as wafers can be processed in existing silicon fabrication facilities. More, this device is available in the industry-standard TO-247, allowing customers to benefit from exceptional GaN performance in a familiar package.

Toni Versluijs, General Manager of Nexperia MOS Business Group said: “This is a strategic move for Nexperia into the high voltage area, and we can now deliver technology suitable for xEV power semiconductor applications. Our GaN is a technology that is ready for volume production, and with scalability to meet high volume applications. The automotive sector is a key focus for Nexperia and one which is forecast to grow significantly for two decades as electric vehicles replace those powered by traditional internal combustion engines as the preferred means of personal and public transport.”

The GAN063-650WSA GaN FET from Nexperia is the first in a portfolio of GaN devices that Nexperia is developing to address the automotive, communication infrastructure and industrial markets.

https://efficiencywins.nexperia.com/innovation/gan-introduction.html

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