Date
05/03/2012
PDF
Click image to enlarge
Vishay Intertechnology today released the first devices in its next-generation D Series of high-voltage power MOSFETs. The new 400 V, 500 V, and 600 V n-channel devices combine low specific on-resistance with ultra-low gate charge and currents from 3 A to 36 A in a wide range of packages. Based on a new high-voltage stripe technology, the D Series MOSFETs released today enable new levels of efficiency and power density. The devices' stripe design — with a smaller die size and terminations — lowers the total gate charge by 50 % compared with previous-generation solutions while increasing switching speed and reducing on-resistance and input capacitance. The 400 V, 500 V, and 600 V devices feature on-resistance down to 0.17 ?, 0.13 ?, and 0.34 ?, respectively. The ultra-low on-resistance values translate into extremely low conduction and switching losses to save energy in high-power, high-performance switch mode applications, including server and telecom power systems, welding, plasma cutting, battery chargers, ballast light, high-intensity discharge (HID) lighting, semiconductor capital equipment, and induction heating. With gate charges down to 9 nC for the 400 V devices, 6 nC for the 500 V devices, and 45 nC for the 600 V devices, the D Series MOSFETs offer best-in-class gate charge times on-resistance — a key figure of merit (FOM) for MOSFETs used in power conversion applications — down to 7.65 ?-nC, 15.6 ?-nC, and 12.3 ?-nC, respectively. The new D Series MOSFETs feature simple gate-drive circuitry and high body diode ruggedness, and they are easy to design into more compact, lighter, and cooler end products. The devices are RoHS-compliant, halogen-free according to the IEC 61249-2-21 definition, and avalanche (UIS)-rated for reliable operation. Samples of the new D Series power MOSFETs are available now. Production quantities will be available in Q3 2012, with lead times of 12 to 16 weeks for larger orders. www.vishay.com
