Next-Generation Package for Power MOSFETs Achieves Significant On-Resistance and Thermal Resistance Reductions

­Toshiba Electronics Europe GmbH (“Toshiba”) announces the launch of two new N-channel power MOSFETs, the 80V TPM1R908QM and the 150V TPM7R10CQ5. These latest offerings adopt Toshiba’s innovative SOP Advance(E) package, designed to significantly enhance performance in switched-mode power supplies for demanding industrial equipment, including data centres and communication base stations.

The new SOP Advance(E) package marks a substantial improvement over Toshiba’s existing SOP Advance(N) package, reducing package resistance by approximately 65% and thermal resistance by approximately 15%. These package enhancements directly translate into superior device performance. The 80V TPM1R908QM exhibits a reduction in drain-source on-resistance (R_DS(ON)) of approximately 21% and channel-case thermal resistance (R_th(ch-c)) of approximately 15% when compared to Toshiba’s existing product, the TPH2R408QM, of same voltage rating. Similarly, the 150V TPM7R10CQ5 achieves approximately 21% lower R_DS(ON) and approximately 15% lower R_th(ch-c) than Toshiba’s existing TPH9R00CQ5, also at the same voltage. The TPM7R10CQ5 is equipped with a high speed body diode for increased efficiency in synchronous rectification. 

The reductions in on-resistance and suppressed temperature rise due to improved thermal resistance contribute to a lower overall on-resistance, even considering positive temperature characteristics. This combination ultimately achieves lower loss and higher efficiency in critical applications such as switched-mode power supplies for industrial equipment, including those powering data centres and communication base stations.

The TPM1R908QM features a drain-source voltage (V_DSS) of 80V, a drain current (I_D) of 238A (T_c=25°C), and a maximum R_DS(ON) of 1.9mΩ (V_GS=10V). The TPM7R10CQ5 offers a V_DSS of 150V, an I_D of 120A (T_c=25°C), and a maximum R_DS(ON) of 7.1mΩ (V_GS=10V). Both products have a channel temperature (T_ch) of 175°C and a maximum R_th(ch-c) of 0.6°C/W (T_c=25°C). The SOP Advance(E) package typically measures 4.9mm × 6.1mm.

To further support circuit design for switched-mode power supplies, Toshiba also provides a G0 SPICE model for quick circuit function verification, alongside highly accurate G2 SPICE models that precisely reproduce transient characteristics.

Toshiba is committed to expanding its portfolio of power MOSFETs to facilitate more efficient power supplies, thereby aiding in the reduction of overall equipment power consumption.

Please follow the links for more information on the TPM1R908QM and TPM7R10CQ5.