NoMIS Power Demonstrates 6.5 kV SiC MOSFET, Advancing a High-Voltage Roadmap to 10 kV and 20 kV SiC IGBTs

­NoMIS Power Corporation, a leader in advanced Silicon Carbide (SiC) power semiconductor technology, today announced a major high-voltage milestone: the successful demonstration of its first 6.5 kV large-die SiC MOSFET. The device was measured at over 8 kV blocking, 90 mΩ on-resistance, and 55 A drain current. The result carries NoMIS Power's proven planar SiC device technology from its established 3.3 kV devices into the high-voltage class, and establishes a clear, demonstrated path toward the company's forthcoming 10 kV MOSFETs and 20 kV SiC IGBTs.

A U.S.-designed SiC roadmap: shipping today and demonstrated for tomorrow

NoMIS Power's high-voltage SiC roadmap spans three stages — 3.3 kV in production and 6.5 kV sampling, with 10 kV in development:

• 3.3 kV — available now. The complete 3.3 kV SiC MOSFET family is in production, spanning 80 mΩ (34 A), 50 mΩ (55 A), and 25 mΩ (105 A) devices in TO-247-4L-HC and bare die, complemented by 50–160 mΩ SiC bi-directional switches and a 500 A half-bridge power module.
• 6.5 kV — sampling now to U.S.-based customers. The demonstrated large-die SiC MOSFET is sampling now for evaluation and anchors an expanding 6.5 kV line, adding on-resistance variants, small-die devices, hybrid junction-barrier Schottky FET (JBSFET) devices, and standalone diodes. JBSFET construction prevents body diode degradation issues, making it very robust for critical applications. Target applications include high-voltage direct current (HVDC), solid-state transformers, pulsed power, rail traction, and MW-scale EV charging. Standard production 6.5 kV parts are scheduled for Q4 2026 and will be available to commercial customers.
• 10 kV and above — in development, sampling in Q4 2026. The pipeline includes MOSFETs, diodes, hybrid (JBSFET) devices, and SiC insulated-gate bipolar transistors (IGBTs) targeting grid-scale HVDC, next-generation traction, and advanced pulsed power, extending the roadmap toward 20 kV.

"Demonstrating 6.5 kV blocking to over 8 kV proves our planar SiC platform scales cleanly from the 3.3 kV devices shipping today into the high-voltage class," said Dr. Adam Morgan, Co-Founder and CEO of NoMIS Power. "High-voltage SiC is becoming foundational to data-center, grid, aerospace, and defense power systems, and it should be built at home — we're building the domestic source the industry can qualify against, from 3.3 kV and 6.5 kV today to 10 kV MOSFETs and 20 kV SiC IGBTs on our roadmap."

A U.S.-based, domestic source of high-voltage SiC

For programs dependent on a single supplier of high-voltage SiC, NoMIS Power offers a domestic alternative. The company's devices are U.S.-designed, ITAR- and DFARS-aware, and available through various foundry options, and its SiC is already specified into U.S. government-funded programs such as U.S. Department of Energy and Department of War programs. The company supports device qualification and design-in — including form-fit-function-compatible devices and support for existing high-voltage SiC platforms — to reduce single-source risk and strengthen continuity of supply for mission-critical programs. NoMIS Power designs SiC devices, packaging, and power modules at its facility within the Albany Nanotech Complex in Albany, New York.

Availability and engagement

The 6.5 kV large-die SiC MOSFET is sampling now to U.S.-based customers for evaluation, with standard production parts scheduled for Q4 2026. NoMIS Power is engaging system developers on design-in, custom current ratings, and packaging. Teams evaluating high-voltage SiC for HVDC, solid-state transformers, pulsed power, traction, high-power charging, or aerospace and defense platforms can contact NoMIS Power to align to the 6.5 kV, 10 kV, and 20 kV roadmap.

Learn more here.