P-Channel MOSFET Features Extended Input Voltage Range

SUNNYVALE, Calif. – Alpha and Omega Semiconductor Limited (AOS) introduced AONR21357, the initial product in this P-Channel family.  The new AONR21357 uses the improved P-Channel MOSFET process to achieve low power loss and reliable startup. The new device rated at -30V drain-source breakdown voltage (BVDss) and -25V gate-source voltage.  It features a maximum on-resistance (RDS(ON)) of 12.3mohm under VGS = -4.5V, and a thermally enhanced 3x3mm DFN package.  The new P-Channel MOSFET is ideal for load switch applications in Notebook Adapter-In/ Battery In sockets.

USB Type-C is becoming the de-facto interface for the latest PCs and mobile designs. With that, the USB-PD standard is implemented to cover various power delivery requirements for many portable devices. The load switch circuit is used to switch on/off the power bus according to the power management proxy. The new MOSFET used as the load switch offers extended input/output voltage range, and is robust and reliable enough to accommodate the possible working conditions. AOS’enhanced P-Channel technology offers robustness toward linear mode operation, and low Miller’s Plateau (<3.5V) to cover the possible USB-PD voltages.

Technical Highlights

The new product family offers various R_DS(ON) levels in combination with multiple package options.

Pricing and Availability

The AONR21357 is immediately available in production quantities with a lead-time of 12 weeks. The unit price of 1,000 pieces is $0.60.

For more information, please visit www.aosmd.com.