Power Management Platform Addresses the Massive Power Products Market Operating up to 16V

Date
05/02/2018

Categories:
Battery Charging & Management, DC-DC Converters, Driver Circuit, Power Management, Switch

Tag:
#towerjazz #powermanagement #Bipolar-CMOS-DMOS #psd

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This absolute best-in-class platform creates breakthrough performance and cost advantages in the multi-billion dollar <16V application power management IC market

MIGDAL HAEMEK, Israel – TowerJazz announced the release of its 300mm 65nm BCD (Bipolar-CMOS-DMOS) process, the most advanced power management platform for up to 16V operation and 24V maximum voltage.  This technology is manufactured in TowerJazz’s Uozu, Japan facility, with best-in-class quality andcycle time, and is based on the Company’s 300mm 65nm automotive qualified flows.

This platform provides significant material competitive advantages for any type of power management chip up to 16V regardless of application, including a wide variety of products such as: PMICs, load switches, DC-DC converters, LED drivers, motor drivers, battery management, analog and digital controllers, and more. IHS Markit Power IC Analyst, Kevin Anderson forecasts a $9.4 billion available market, which this technology addresses, in 2018 with continual growth.

TowerJazz’s 65nm BCD process is leading this low voltage market segment with the highest power efficiency, very small die size, best digital integration capability; and superior cost effectiveness through both the smallest aerial footprint and the lowest mask count.

The process includes four leading edge power LDMOS transistors: 5V, 7V, 12V and 16V operation, each with the best available Rdson and Qgd parameters. In addition to the new aforementioned cost and figure of merit benchmarks, multiple chips can be integrated to a single monolithic IC solution replacing a multiple chip module for an improved system cost structure and system performance.

TowerJazz’s power transistors are fully isolated to withstand high currents, all with an ultra-low Rdson, e.g. less than 1mΩ*mm² for the 5V LDMOS. For products which operate at the megahertz (MHz) switching frequencies, the 65nm BCD power transistors benefit from a very low Qgd down to 2.6mΩ*nC. In addition, very low metal resistance is achieved using a single or dual 3.3um top thick copper. The 65nm BCD also offers aggressive 113Kgate/mm² 5V digital density and an 800Kgate/mm² 1.2V digital library.

For more information on TowerJazz’s 65nm BCD technology, please visit http://www.towerjazz.com/power-management.html.

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