Renesas Electronics Corporation strengthened its robust RF Amplifiers portfolio with the new F1490 delivering much lower quiescent current (75 mA) than competitive solutions. The F1490 is a second-generation high-gain, 2-stage RF amplifier that covers the key sub-6 GHz 5G frequency bands from 1.8 GHz to 5.0 GHz. The F1490 benefits designers with simplified product selection for their transmitter (Tx) lineup, elimination of a gain block with better margin, two selectable gain modes for system design flexibility, lower power consumption, and superior performance.
Designed to operate within the 1.8 GHz and 5.0 GHz frequency range, the F1490 RF amplifier features high gain, high linearity, and wide bandwidth, and is well suited for use with both FDD and TDD sub-6 GHz 5G applications. The F1490’s pin-to-pin compatibility with current devices lowers the cost of design updates.
Key Features of the F1490
Today’s higher data rates drive the need for better radio signal-to-noise ratios, which translates to the need for Renesas’ higher linearity RF components. The company’s patented RF solutions with unique technical innovations address the evolving needs of a wide range of applications, including cellular 4G/5G base stations, communications systems, microwave (RF/IF), CATV, and test and measurement equipment. Renesas’ AAS solutions include interface amplifiers, low noise amplifiers, switches and pre-drivers to address the high performance transmit and receive requirements of massive MIMO with the highest efficiencies in the smallest form factors. See the complete portfolio at Renesas RF & Microwave products.