RF transistors from STMicroelectronics leverage latest high-voltage tech



STAC250V2-500E 13.6MHz RF power transistor

STMicroelectronics’ STAC250V2-500E 13.6MHz RF power transistor delivers industry-leading robustness and high power density in a miniaturized and thermally efficient package for high-output class-E industrial power supplies.
The STAC250V2-500E has load-mismatch capability of 20:1, the highest in the industry, for enhanced safety up to the maximum power of 600W.

The 0.55x1.35-inch STAC air-cavity package is more than 50% smaller compared with alternative devices in conventional ceramic packages. Two STAC250V2-500E transistors used together occupy a similar area to that of a single ceramic transistor, enabling compact power supplies above 1kW. 25% lower thermal resistance of the air-cavity package helps boost reliability.

These advantages of the STAC250V2-500E ensure superior performance in applications such as induction heaters, plasma-enhanced vapor-deposition systems, and production equipment for solar cells and flat-panel televisions.
The STAC250V2-500E is produced using ST’s latest high-voltage SuperDMOS technology, and has a maximum operating voltage of 250V.

The breakdown voltage of over 900V ensures ruggedness in class-E inductive resonant circuits or other applications such as class-D power amplifiers. The STAC250V2-500E is in production now, in the STAC177 package, priced from $66.00 for orders of 1,000 units. Samples are available immediately.