ROHM demonstrates second-generation SiC MOSFETs at PCIM 2013



Adding to its broad range of SiC products, ROHM presented its line-up expansion of high-voltage N-channel SiC (Silicon Carbide) Power MOSFETs at PCIM in Nuremberg. The SCT2xx series without Schottky diode features different ON-resistance types and max. currents in a TO247 package without an integrated SiC SBD. They provide significantly lower power loss and handle a maximum junction temperature of 175°C which is unmatched in the market. The SCH2080KEC variant comes co-packed with a SiC SBD in a single package. With low on-resistance, high breakdown voltage, high speed switching and reverse recovery these new MOSFETs (SCT2080KEC, SCH2080KEC, SCT2160KEC, SCT22280KEC and SCT2450KEC) are easy to parallel and to drive which makes them ideal for deployment in solar inverters, DC/DC converters, switch mode power supplies, induction heating or motor drives. Overall, these devices not only enable power saving and high speed operation but also the reduction of space and components, and can be configured based on customer requirements. Current Si IGBTs commonly used in 1200V-class inverters and converters cause power switching loss due to tail current or recovery of the external FRD, bringing a need for SiC power MOSFETs capable of operating with low switching loss at high frequencies. However, conventional SiC power MOSFETs experienced numerous reliability problems, including characteristic degradation due to body diode conduction (e.g. increased ON resistance, forward voltage, and resistance degradation) as well as failures of the gate oxide film, making full-scale integration impossible. ROHM has succeeded in overcoming these problems by improving processes related to crystal defects and device structure and reducing ON resistance per unit area by approximately 30% compared to conventional products, also leading to increased miniaturization. Key Features • Low ON-resistance • Minimal increase in ON-resistance during high-temperature operation • Fast switching speed • Fast reverse recovery • Easy to drive Parallel • Drain source voltage 1.200V • Gate source voltage -6V to 22V • Power dissipation (Tc = 25°C): 85 - 165W • Junction Temperature: 175° C • Storage temperature -55 to 175° C ROHM Semiconductor